Samsung Foundry has made some changes to its plans concerning its 3 nm-class process technologies that use gate-all-around (GAA) transistors, or what Samsung calls its multi-bridge channel field-effect transistors (MBCFETs). Based on new information direct from Samsung, it would appear that its first version of 3nm, 3GAE (3nm gate-all-around early), is coming to high volume manufacturing a year later than expected, but also it seems to have removed this technology from its public roadmap, suggesting it may be for internal use only. Meanwhile, 3GAE's successor 3GAP (3nm gate-all-around plus) node is still in the roadmap, it is on track for volume manufacturing in 2023. 3GAE on Track for 2022, Maybe Just Not for Everyone At its recent 2021 IP & ASIC Design Ecosystem Conference in China, Samsung...
TSMC this week has announced plans to spend $100 billion on new production facilities as well as R&D over the next three years. The world's largest contract maker of...45 by Anton Shilov on 4/2/2021
This year, at the international VLSI conference, Intel’s CTO Mike Mayberry gave one of the plenary presentations, which this year was titled ‘The Future of Compute’. Within the presentation...14 by Dr. Ian Cutress on 6/22/2020
Samsung Foundry this week updated its fabrication technology roadmap, introducing a number of changes and announcing the first details about its 3 nm manufacturing process that is several years...25 by Anton Shilov on 5/24/2018